Growth and characterization of phosphorus doped diamond films using trimethyl phosphite as the doping source

Phosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy. Current–voltage characteristics were measured and...

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Veröffentlicht in:Journal of applied physics 1997-04, Vol.81 (8), p.3644-3646
Hauptverfasser: Roychoudhury, Rajat, Charlson, E. J., Stacy, T., Hajsaid, M., Charlson, E. M., Meese, J. M.
Format: Artikel
Sprache:eng
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Zusammenfassung:Phosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy. Current–voltage characteristics were measured and the resistivities of the films were found to be of the order of 1012 Ω cm at room temperature. The diamond films gave indications of n-type behavior when electron beam induced current studies were performed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.365483