Growth and characterization of phosphorus doped diamond films using trimethyl phosphite as the doping source
Phosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy. Current–voltage characteristics were measured and...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 1997-04, Vol.81 (8), p.3644-3646 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Phosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy. Current–voltage characteristics were measured and the resistivities of the films were found to be of the order of 1012 Ω cm at room temperature. The diamond films gave indications of n-type behavior when electron beam induced current studies were performed. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.365483 |