Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resis...
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Veröffentlicht in: | Applied physics letters 2011-10, Vol.99 (15), p.153501-153501-3 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than ∼10
6
cm
−2
, which is consistent with the measurements of the state-of-the-art GaN RTDs. At around 300 GHz, the simulation for a RTD oscillator also demonstrates evident decreases of rf power and efficiency because of the electron trapping effect. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3650253 |