Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode

We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resis...

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Veröffentlicht in:Applied physics letters 2011-10, Vol.99 (15), p.153501-153501-3
Hauptverfasser: Yang, Lin'an, He, Hanbing, Mao, Wei, Hao, Yue
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than ∼10 6 cm −2 , which is consistent with the measurements of the state-of-the-art GaN RTDs. At around 300 GHz, the simulation for a RTD oscillator also demonstrates evident decreases of rf power and efficiency because of the electron trapping effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3650253