Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

We report significantly improved electrostatic discharge (ESD) properties of InGaN/GaN-based light-emitting diodes (LEDs) with inserting Si-delta-doped layers between multiple quantum wells and n -cladding layer. The ESD endurance voltage increased from −1200 V to −4000 V with the insertion of delta...

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Veröffentlicht in:	Applied physics letters 2011-09, Vol.99 (11), p.111109-111109-3
Hauptverfasser:	Zheng, Zhiyuan, Chen, Zimin, Xian, Yulun, Fan, Bingfeng, Huang, Shanjin, Jia, Weiqing, Wu, Zhisheng, Wang, Gang, Jiang, Hao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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