Thermal degradation of ZnO/InP interfaces: Heteroepitaxial growth of precipitated indium on InP{111} planes
X-ray diffraction has been used to characterize the heteroepitaxial growth of indium formed at the interfaces between ZnO thin film and InP monocrystalline substrates. The In formation was induced by a thermal degradation of InP during annealing in the range of 400–700 °C for 3 min. The results prov...
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Veröffentlicht in: | Journal of applied physics 1996-12, Vol.80 (11), p.6204-6210 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | X-ray diffraction has been used to characterize the heteroepitaxial growth of indium formed at the interfaces between ZnO thin film and InP monocrystalline substrates. The In formation was induced by a thermal degradation of InP during annealing in the range of 400–700 °C for 3 min. The results prove that the evolution of the degradation is controlled by the decomposition of close-packed InP{111} planes, while the polar character of these planes plays a very important role. Moreover, for all four employed orientations of InP substrates [namely (111)A, (111)B, (110) and (100)], In is found to grow (101) on InP{111} planes. On an InP{111} interface plane, In crystallites can occur in six possible orientations characterized by a condition In〈100〉∥InP〈110〉. To estimate a mismatch of the heteroepitaxy, a geometrical model of the atomic arrangement at In(101)-InP(111) interface is given. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.363696 |