Thermal degradation of ZnO/InP interfaces: Heteroepitaxial growth of precipitated indium on InP{111} planes

X-ray diffraction has been used to characterize the heteroepitaxial growth of indium formed at the interfaces between ZnO thin film and InP monocrystalline substrates. The In formation was induced by a thermal degradation of InP during annealing in the range of 400–700 °C for 3 min. The results prov...

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Veröffentlicht in:Journal of applied physics 1996-12, Vol.80 (11), p.6204-6210
Hauptverfasser: Kečkéš, J., Ortner, B., Červeň, I., Jakabovič, J., Kováč, J.
Format: Artikel
Sprache:eng
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Zusammenfassung:X-ray diffraction has been used to characterize the heteroepitaxial growth of indium formed at the interfaces between ZnO thin film and InP monocrystalline substrates. The In formation was induced by a thermal degradation of InP during annealing in the range of 400–700 °C for 3 min. The results prove that the evolution of the degradation is controlled by the decomposition of close-packed InP{111} planes, while the polar character of these planes plays a very important role. Moreover, for all four employed orientations of InP substrates [namely (111)A, (111)B, (110) and (100)], In is found to grow (101) on InP{111} planes. On an InP{111} interface plane, In crystallites can occur in six possible orientations characterized by a condition In〈100〉∥InP〈110〉. To estimate a mismatch of the heteroepitaxy, a geometrical model of the atomic arrangement at In(101)-InP(111) interface is given.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.363696