GaN/SiC avalanche photodiodes

GaN/SiC avalanche photodiodes

Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of ∼10 5 , and responsivity exceeding 4.2 A/W at 365 nm were achi...

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Veröffentlicht in:Applied physics letters 2011-09, Vol.99 (13), p.131110-131110-3
Hauptverfasser: Zhou, Qiugui, McIntosh, Dion C., Lu, Zhiwen, Campbell, Joe C., Sampath, Anand V., Shen, Hongen, Wraback, Michael
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container_end_page 131110-3
container_issue 13
container_start_page 131110
container_title Applied physics letters
container_volume 99
creator Zhou, Qiugui
McIntosh, Dion C.
Lu, Zhiwen
Campbell, Joe C.
Sampath, Anand V.
Shen, Hongen
Wraback, Michael
description Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of ∼10 5 , and responsivity exceeding 4.2 A/W at 365 nm were achieved.
doi_str_mv 10.1063/1.3636412
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title GaN/SiC avalanche photodiodes
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