GaN/SiC avalanche photodiodes
Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of ∼10 5 , and responsivity exceeding 4.2 A/W at 365 nm were achi...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2011-09, Vol.99 (13), p.131110-131110-3 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of ∼10
5
, and responsivity exceeding 4.2 A/W at 365 nm were achieved. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.3636412 |