Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K

Systematic excitation power and temperature-dependent measurements on the emission lines of single self-assembled InP/(Al 0.20 Ga 0.80 ) 0.51 In 0.49 P quantum dots embedded in micropillars have been performed. The quantum dots were excited optically via a pulsed laser and their luminescence was col...

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Veröffentlicht in:Journal of applied physics 2011-09, Vol.110 (6), p.063108-063108-5
Hauptverfasser: Bommer, M., Schulz, W.-M., Roßbach, R., Jetter, M., Michler, P., Thomay, T., Leitenstorfer, A., Bratschitsch, R.
Format: Artikel
Sprache:eng
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Zusammenfassung:Systematic excitation power and temperature-dependent measurements on the emission lines of single self-assembled InP/(Al 0.20 Ga 0.80 ) 0.51 In 0.49 P quantum dots embedded in micropillars have been performed. The quantum dots were excited optically via a pulsed laser and their luminescence was collected using a micro-photoluminescence setup. The exciton and biexciton intensity, linewidth, and spectral position was investigated in a temperature range from 4 K up to 130 K. Single-photon emission from the quantum dots is presented up to a temperature of 100 K, confirmed by photon-statistics measurements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3633218