Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes

Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes

A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by a...

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Veröffentlicht in:Applied physics letters 2011-08, Vol.99 (9), p.093505-093505-3
Hauptverfasser: Durmuş, Haziret, Atav, Ülfet
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description A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods.
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fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3633116</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-95f968499813c92f1f133bb8de551d66c339454b2e993e5a7b56191e6c1223883</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsH_0GuHrZmdjbp5iJIqbVQ8ODHTZZsdmJX201Jgth_7y4tePI078DzDszD2DWICQiFtzBBhQigTtgIxHSa9bk8ZSMhBGZKSzhnFzF-9qvMEUfsff6TgrGp9R33jn_7TTIflDW0o66hLvFIoaXIA8U2JtNZ4i74LV9mb9yuzVDtgZhaG4f-s137lL72vGl9Q_GSnTmziXR1nGP2-jB_mT1mq6fFcna_ymxeFinT0mlVFlqXgFbnDhwg1nXZkJTQKGURdSGLOietkaSZ1lKBBlIW8hzLEsfs5nDXBh9jIFftQrs1YV-BqAYvFVRHLz17d2CjbZMZHv8f_pNTeVcd5OAv8WNqqQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Durmuş, Haziret ; Atav, Ülfet</creator><creatorcontrib>Durmuş, Haziret ; Atav, Ülfet</creatorcontrib><description>A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3633116</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-08, Vol.99 (9), p.093505-093505-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-95f968499813c92f1f133bb8de551d66c339454b2e993e5a7b56191e6c1223883</citedby><cites>FETCH-LOGICAL-c284t-95f968499813c92f1f133bb8de551d66c339454b2e993e5a7b56191e6c1223883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3633116$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1558,4510,27923,27924,76155,76161</link.rule.ids></links><search><creatorcontrib>Durmuş, Haziret</creatorcontrib><creatorcontrib>Atav, Ülfet</creatorcontrib><title>Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes</title><title>Applied physics letters</title><description>A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0GuHrZmdjbp5iJIqbVQ8ODHTZZsdmJX201Jgth_7y4tePI078DzDszD2DWICQiFtzBBhQigTtgIxHSa9bk8ZSMhBGZKSzhnFzF-9qvMEUfsff6TgrGp9R33jn_7TTIflDW0o66hLvFIoaXIA8U2JtNZ4i74LV9mb9yuzVDtgZhaG4f-s137lL72vGl9Q_GSnTmziXR1nGP2-jB_mT1mq6fFcna_ymxeFinT0mlVFlqXgFbnDhwg1nXZkJTQKGURdSGLOietkaSZ1lKBBlIW8hzLEsfs5nDXBh9jIFftQrs1YV-BqAYvFVRHLz17d2CjbZMZHv8f_pNTeVcd5OAv8WNqqQ</recordid><startdate>20110829</startdate><enddate>20110829</enddate><creator>Durmuş, Haziret</creator><creator>Atav, Ülfet</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110829</creationdate><title>Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes</title><author>Durmuş, Haziret ; Atav, Ülfet</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-95f968499813c92f1f133bb8de551d66c339454b2e993e5a7b56191e6c1223883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Durmuş, Haziret</creatorcontrib><creatorcontrib>Atav, Ülfet</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Durmuş, Haziret</au><au>Atav, Ülfet</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes</atitle><jtitle>Applied physics letters</jtitle><date>2011-08-29</date><risdate>2011</risdate><volume>99</volume><issue>9</issue><spage>093505</spage><epage>093505-3</epage><pages>093505-093505-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3633116</doi></addata></record>
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title Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T02%3A53%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Extraction%20of%20voltage-dependent%20series%20resistance%20from%20I-V%20characteristics%20of%20Schottky%20diodes&rft.jtitle=Applied%20physics%20letters&rft.au=Durmu%C5%9F,%20Haziret&rft.date=2011-08-29&rft.volume=99&rft.issue=9&rft.spage=093505&rft.epage=093505-3&rft.pages=093505-093505-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3633116&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true