Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes

A method for extracting the bias dependent behaviour of the series resistance of a Schottky barrier diode from experimental I-V data is presented. It was assumed that the behaviour of the Schottky barrier is well defined by thermionic emission theory. Relative merit of the method was determined by applying the method on some artificial sets of I-V data corresponding to known values of series resistances and comparing the results with existing methods.