Efficient resistive memory effect on SrTiO3 by ionic-bombardment

Efficient resistive memory effect on SrTiO3 by ionic-bombardment

We show that ionic-bombardment leads to noticeable resistive memory effect on pure SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states. We found that Ar-bombardment is more efficient than thermal-reduction in creati...

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Veröffentlicht in:Applied physics letters 2011-08, Vol.99 (9)
Hauptverfasser: Gross, Heiko, Oh, Seongshik
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description We show that ionic-bombardment leads to noticeable resistive memory effect on pure SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states. We found that Ar-bombardment is more efficient than thermal-reduction in creating memory-effective oxygen vacancies. One of the advantages of the ionic-bombardment scheme is that it can be easily combined with lithographic processes to create spatially selective memory effect.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3633114</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3633114</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-b5045907ff7340b6dfd07ffb7edcb8696ac1ba74e31477013a4a3b0baf18252d3</originalsourceid><addsrcrecordid>eNotjz1rwzAURUVpoG7Sof9Aawel7_nJkr21hPQDAhmazkaSJVCp7SKZgv99HZrp3jPcC4exe4QtgqJH3JIiQpRXrEDQWiy9vmYFAJBQTYU37DbnrwWrkqhgT_sQoot-mHjyOeYp_nre-35MM_cheDfxceAf6RSPxO3M4zhEJ-zYW5O6fplt2CqY7-zvLrlmny_70-5NHI6v77vng3Bl2UzCViCrBnQImiRY1YXuDFb7ztlaNco4tEZLTyi1BiQjDVmwJmBdVmVHa_bw_-vSmHPyof1JsTdpbhHas3qL7UWd_gDpK0rn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Efficient resistive memory effect on SrTiO3 by ionic-bombardment</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Gross, Heiko ; Oh, Seongshik</creator><creatorcontrib>Gross, Heiko ; Oh, Seongshik</creatorcontrib><description>We show that ionic-bombardment leads to noticeable resistive memory effect on pure SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states. We found that Ar-bombardment is more efficient than thermal-reduction in creating memory-effective oxygen vacancies. One of the advantages of the ionic-bombardment scheme is that it can be easily combined with lithographic processes to create spatially selective memory effect.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3633114</identifier><language>eng</language><ispartof>Applied physics letters, 2011-08, Vol.99 (9)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-b5045907ff7340b6dfd07ffb7edcb8696ac1ba74e31477013a4a3b0baf18252d3</citedby><cites>FETCH-LOGICAL-c229t-b5045907ff7340b6dfd07ffb7edcb8696ac1ba74e31477013a4a3b0baf18252d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Gross, Heiko</creatorcontrib><creatorcontrib>Oh, Seongshik</creatorcontrib><title>Efficient resistive memory effect on SrTiO3 by ionic-bombardment</title><title>Applied physics letters</title><description>We show that ionic-bombardment leads to noticeable resistive memory effect on pure SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states. We found that Ar-bombardment is more efficient than thermal-reduction in creating memory-effective oxygen vacancies. One of the advantages of the ionic-bombardment scheme is that it can be easily combined with lithographic processes to create spatially selective memory effect.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotjz1rwzAURUVpoG7Sof9Aawel7_nJkr21hPQDAhmazkaSJVCp7SKZgv99HZrp3jPcC4exe4QtgqJH3JIiQpRXrEDQWiy9vmYFAJBQTYU37DbnrwWrkqhgT_sQoot-mHjyOeYp_nre-35MM_cheDfxceAf6RSPxO3M4zhEJ-zYW5O6fplt2CqY7-zvLrlmny_70-5NHI6v77vng3Bl2UzCViCrBnQImiRY1YXuDFb7ztlaNco4tEZLTyi1BiQjDVmwJmBdVmVHa_bw_-vSmHPyof1JsTdpbhHas3qL7UWd_gDpK0rn</recordid><startdate>20110829</startdate><enddate>20110829</enddate><creator>Gross, Heiko</creator><creator>Oh, Seongshik</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110829</creationdate><title>Efficient resistive memory effect on SrTiO3 by ionic-bombardment</title><author>Gross, Heiko ; Oh, Seongshik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-b5045907ff7340b6dfd07ffb7edcb8696ac1ba74e31477013a4a3b0baf18252d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gross, Heiko</creatorcontrib><creatorcontrib>Oh, Seongshik</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gross, Heiko</au><au>Oh, Seongshik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Efficient resistive memory effect on SrTiO3 by ionic-bombardment</atitle><jtitle>Applied physics letters</jtitle><date>2011-08-29</date><risdate>2011</risdate><volume>99</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We show that ionic-bombardment leads to noticeable resistive memory effect on pure SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states. We found that Ar-bombardment is more efficient than thermal-reduction in creating memory-effective oxygen vacancies. One of the advantages of the ionic-bombardment scheme is that it can be easily combined with lithographic processes to create spatially selective memory effect.</abstract><doi>10.1063/1.3633114</doi></addata></record>
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title Efficient resistive memory effect on SrTiO3 by ionic-bombardment
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T09%3A38%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Efficient%20resistive%20memory%20effect%20on%20SrTiO3%20by%20ionic-bombardment&rft.jtitle=Applied%20physics%20letters&rft.au=Gross,%20Heiko&rft.date=2011-08-29&rft.volume=99&rft.issue=9&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3633114&rft_dat=%3Ccrossref%3E10_1063_1_3633114%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true