Efficient resistive memory effect on SrTiO3 by ionic-bombardment

We show that ionic-bombardment leads to noticeable resistive memory effect on pure SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states. We found that Ar-bombardment is more efficient than thermal-reduction in creating memory-effective oxygen vacancies. One of the advantages of the ionic-bombardment scheme is that it can be easily combined with lithographic processes to create spatially selective memory effect.