Optical properties of GaSb alloys and photodiodes grown by liquid-phase epitaxy
The carrier concentration of GaSb epitaxial layers grown from Sb-rich solutions by liquid-phase epitaxy is controlled by replacing nominally undoped GaSb by Te-doped polycrystalline GaSb to suppress or compensate the background hole concentration. The dependence of the 10 K photoluminescence peak wa...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 1996-08, Vol.80 (3), p.1731-1734 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The carrier concentration of GaSb epitaxial layers grown from Sb-rich solutions by liquid-phase epitaxy is controlled by replacing nominally undoped GaSb by Te-doped polycrystalline GaSb to suppress or compensate the background hole concentration. The dependence of the 10 K photoluminescence peak wavelength and intensity on the doping level of the Te-compensated GaSb layers has been investigated. The absorption spectra are examined as a function of carrier concentration. Low-dopant-concentration p-type GaSb samples exhibit the band gap shrinkage with increasing hole concentration, while the lightly Te-doped n-type GaSb samples exhibit a band gap increase due to the Burstein–Moss shift with increasing electron concentration. By using Te-doped GaSb layers with an electron concentration of 5.6×1015 cm−3, the fabricated GaSb photodiodes exhibit a low dark current of 2 μA at −5 V, a high breakdown voltage of 28.7 V at 20 μA, and a maximum photoresponsivity of 0.55 A/W with an external quantum efficiency of 40% at 1.72 μm wavelength. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.362972 |