Time-resolved photoluminescence microscopy of GaInAs/GaInAsP quantum wells intermixed using a pulsed laser technique

High spatial resolution time-resolved photoluminescence has been used to study GaInAs/GaInAsP quantum-well structures selectively intermixed using the pulsed photoabsorption-induced disordering technique. Photoluminescence decay measurements at wavelengths ≳1.3 μm were obtained using novel high-efficiency photon-counting detectors and were found to correlate spatially with the observed luminescence blue shift in these structures. Results indicate a reduction in the nonradiative recombination time of nearly two orders of magnitude as a result of this intermixing technique.