Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications

We propose a low power, high-performance nanoscale (φ = 150 nm) resistive memory device having a Ge2Sb2Te5/Ti/Pr0.7Ca0.3MnO3 (GST/Ti/PCMO) structure. As a thermoelectric heater and/or thermal barrier, GST accelerates the Ti/PCMO interfacial redox process thermally by enhancing the mobility of oxygen...

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Veröffentlicht in:	Applied physics letters 2011-08, Vol.99 (6)
Hauptverfasser:	Siddik, Manzar, Jung, Seungjae, Park, Jubong, Lee, Wootae, Kim, Seonghyun, Lee, Joonmyoung, Shin, Jungho, Park, Sangsu, Lee, Daeseok, Kim, Insung, Hwang, Hyunsang
Format:	Artikel
Sprache:	eng
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Zusammenfassung:	We propose a low power, high-performance nanoscale (φ = 150 nm) resistive memory device having a Ge2Sb2Te5/Ti/Pr0.7Ca0.3MnO3 (GST/Ti/PCMO) structure. As a thermoelectric heater and/or thermal barrier, GST accelerates the Ti/PCMO interfacial redox process thermally by enhancing the mobility of oxygen ions and minimizes the loss of local heat. Improvement of the memory performances and voltage-time dilemma issue is achieved by adopting this type of thermally assisted process.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.3622656