III-Nitride full-scale high-resolution microdisplays
We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes ( µ LEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnit...
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Veröffentlicht in: | Applied physics letters 2011-07, Vol.99 (3), p.031116-031116-3 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (
µ
LEDs) capable of delivering
video
graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to −100°C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between
µ
LED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3615679 |