Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the idea...

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Veröffentlicht in:Journal of applied physics 1996-01, Vol.79 (1), p.540-544
Hauptverfasser: Look, D. C., Jogai, B., Kaspi, R., Ebel, J. L., Evans, K. R., Jones, R. L., Nakano, K., Sherriff, R. E., Stutz, C. E., DeSalvo, G. C., Ito, C.
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Sprache:eng
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Zusammenfassung:The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal ‘‘square’’ In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.360862