Non-invasive nano-imaging of ion implanted and activated copper in silicon

Using vibrational imaging techniques including Fourier-transform infrared (FTIR) synchrotron microscopy, Raman microscopy, and scattering scanning near-field infrared microcscopy (s-SNIM), we mapped a sample of phosphor and copper ions implanted in a high-purity silicon wafer. While Raman microscopy...

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Veröffentlicht in:Journal of applied physics 2011-07, Vol.110 (2), p.024307-024307-7
Hauptverfasser: Ballout, Fouad, Samson, Jean-Sébastien, Schmidt, Diedrich A., Bründermann, Erik, Mathis, Yves-Laurent, Gasharova, Biliana, Dirk Wieck, Andreas, Havenith, Martina
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Sprache:eng
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Zusammenfassung:Using vibrational imaging techniques including Fourier-transform infrared (FTIR) synchrotron microscopy, Raman microscopy, and scattering scanning near-field infrared microcscopy (s-SNIM), we mapped a sample of phosphor and copper ions implanted in a high-purity silicon wafer. While Raman microscopy monitors the structural disorder within the implantation fields, the aforementionedinfrared techniques provide a detailed picture of the distribution of the free carriers. On a large scale (tens of micrometers), we visualized the channeling effects of phosphor dopants in silicon using FTIR microscopy. In comparison, using s-SNIM we were able to image, on a nanometer scale, local variations of the dielectric properties of the silicon substrate due to the activation of copper dopants.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3606415