Non-invasive nano-imaging of ion implanted and activated copper in silicon
Using vibrational imaging techniques including Fourier-transform infrared (FTIR) synchrotron microscopy, Raman microscopy, and scattering scanning near-field infrared microcscopy (s-SNIM), we mapped a sample of phosphor and copper ions implanted in a high-purity silicon wafer. While Raman microscopy...
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Veröffentlicht in: | Journal of applied physics 2011-07, Vol.110 (2), p.024307-024307-7 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Using vibrational imaging techniques including Fourier-transform infrared (FTIR) synchrotron microscopy, Raman microscopy, and scattering scanning near-field infrared microcscopy
(s-SNIM), we mapped a sample of phosphor and copper ions implanted in a high-purity silicon wafer. While Raman microscopy monitors the structural disorder within the implantation fields, the aforementionedinfrared techniques provide a detailed picture of the distribution of the free carriers. On a large scale (tens of micrometers), we visualized the channeling effects of phosphor dopants in silicon using FTIR microscopy. In comparison, using s-SNIM we were able to image, on a nanometer scale, local variations of the dielectric properties of the silicon substrate due to the activation of copper dopants. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.3606415 |