Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride

We investigate key electrical properties of monolayer graphene assembled by chemical vapor deposition (CVD). Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO 2 . Small-signal transconductance ( g m ) and effective carrier mobility ( μ eff ) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO 2 . Compared with GFET with exfoliated graphene on SiO 2 , g m and μ eff measured from device with CVD graphene on h-BN substrate exhibit comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics.