Texture-induced asymmetric reactions in TiN/Al–Cu/TiN

Thermally induced reactions in TiN/Al–Cu/TiN have been investigated. It is observed that the amount of the reactions is different at the two interfaces between Al–Cu and TiN. While there is minimal reaction between Al–Cu and the TiN overlayer, the reaction between Al–Cu and the TiN underlayer increa...

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Veröffentlicht in:Journal of applied physics 1995-12, Vol.78 (12), p.7419-7421
Hauptverfasser: Hong, Q. Z., Jeng, S. P., Havemann, R. H., Tsai, H. L., Liu, H. Y.
Format: Artikel
Sprache:eng
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Zusammenfassung:Thermally induced reactions in TiN/Al–Cu/TiN have been investigated. It is observed that the amount of the reactions is different at the two interfaces between Al–Cu and TiN. While there is minimal reaction between Al–Cu and the TiN overlayer, the reaction between Al–Cu and the TiN underlayer increases the sheet resistance of Al–Cu by as much as 15%. It is further shown that the asymmetric reactions are most likely caused by the different degree of (111) texture of TiN grown on amorphous SiO2 and textured, polycrystalline Al–Cu.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.360398