Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two st...

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Veröffentlicht in:Journal of applied physics 2011-06, Vol.109 (12)
Hauptverfasser: Shuai, Yao, Zhou, Shengqiang, Bürger, Danilo, Helm, Manfred, Schmidt, Heidemarie
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Zhou, Shengqiang
Bürger, Danilo
Helm, Manfred
Schmidt, Heidemarie
description Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.
doi_str_mv 10.1063/1.3601113
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3601113</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3601113</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-8a52e4ce9b16ea3366bf3143378fa224b64ade993a55361cc63444e1fa8f73c23</originalsourceid><addsrcrecordid>eNotj7FOwzAURS0EEqEw8AdZGdL4-dmOPZaKFqSKMsAcOeYZjEJS2aGIv6eITucOR1c6jF0DnwPXWMMcNQcAPGEFcGOrRil-ygrOBVTGNvacXeT8wQ-OQVuw5nEc9mPvpthT2cXdYaYyUY55insq83ec_Hsc3so4lIuv-jauaIv103TJzoLrM10dOWMvq7vn5X212a4flotN5YVVU2WcEiQ92Q40OUStu4AgERsTnBCy09K9krXolEIN3muUUhIEZ0KDXuCM3fz_-jTmnCi0uxQ_Xfppgbd_xS20x2L8BbDXRuQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Shuai, Yao ; Zhou, Shengqiang ; Bürger, Danilo ; Helm, Manfred ; Schmidt, Heidemarie</creator><creatorcontrib>Shuai, Yao ; Zhou, Shengqiang ; Bürger, Danilo ; Helm, Manfred ; Schmidt, Heidemarie</creatorcontrib><description>Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3601113</identifier><language>eng</language><ispartof>Journal of applied physics, 2011-06, Vol.109 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-8a52e4ce9b16ea3366bf3143378fa224b64ade993a55361cc63444e1fa8f73c23</citedby><cites>FETCH-LOGICAL-c295t-8a52e4ce9b16ea3366bf3143378fa224b64ade993a55361cc63444e1fa8f73c23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Shuai, Yao</creatorcontrib><creatorcontrib>Zhou, Shengqiang</creatorcontrib><creatorcontrib>Bürger, Danilo</creatorcontrib><creatorcontrib>Helm, Manfred</creatorcontrib><creatorcontrib>Schmidt, Heidemarie</creatorcontrib><title>Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt</title><title>Journal of applied physics</title><description>Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotj7FOwzAURS0EEqEw8AdZGdL4-dmOPZaKFqSKMsAcOeYZjEJS2aGIv6eITucOR1c6jF0DnwPXWMMcNQcAPGEFcGOrRil-ygrOBVTGNvacXeT8wQ-OQVuw5nEc9mPvpthT2cXdYaYyUY55insq83ec_Hsc3so4lIuv-jauaIv103TJzoLrM10dOWMvq7vn5X212a4flotN5YVVU2WcEiQ92Q40OUStu4AgERsTnBCy09K9krXolEIN3muUUhIEZ0KDXuCM3fz_-jTmnCi0uxQ_Xfppgbd_xS20x2L8BbDXRuQ</recordid><startdate>20110615</startdate><enddate>20110615</enddate><creator>Shuai, Yao</creator><creator>Zhou, Shengqiang</creator><creator>Bürger, Danilo</creator><creator>Helm, Manfred</creator><creator>Schmidt, Heidemarie</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110615</creationdate><title>Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt</title><author>Shuai, Yao ; Zhou, Shengqiang ; Bürger, Danilo ; Helm, Manfred ; Schmidt, Heidemarie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-8a52e4ce9b16ea3366bf3143378fa224b64ade993a55361cc63444e1fa8f73c23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shuai, Yao</creatorcontrib><creatorcontrib>Zhou, Shengqiang</creatorcontrib><creatorcontrib>Bürger, Danilo</creatorcontrib><creatorcontrib>Helm, Manfred</creatorcontrib><creatorcontrib>Schmidt, Heidemarie</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shuai, Yao</au><au>Zhou, Shengqiang</au><au>Bürger, Danilo</au><au>Helm, Manfred</au><au>Schmidt, Heidemarie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt</atitle><jtitle>Journal of applied physics</jtitle><date>2011-06-15</date><risdate>2011</risdate><volume>109</volume><issue>12</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.</abstract><doi>10.1063/1.3601113</doi></addata></record>
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title Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T20%3A12%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Nonvolatile%20bipolar%20resistive%20switching%20in%20Au/BiFeO3/Pt&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Shuai,%20Yao&rft.date=2011-06-15&rft.volume=109&rft.issue=12&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.3601113&rft_dat=%3Ccrossref%3E10_1063_1_3601113%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true