Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two st...

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Veröffentlicht in:Journal of applied physics 2011-06, Vol.109 (12)
Hauptverfasser: Shuai, Yao, Zhou, Shengqiang, Bürger, Danilo, Helm, Manfred, Schmidt, Heidemarie
Format: Artikel
Sprache:eng
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Zusammenfassung:Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3601113