Transport mechanism in ambipolar pentacene organic thin film transistors with lithium fluoride gate dielectric
The electrical properties of organic thin film transistors (OTFTs) based on pentacene as the active layer and lithium fluoride (LiF) as the gate dielectric layer were investigated. Fabricated devices exhibited ambipolar behavior that can be controlled by the applied source, drain and gate biases. It...
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Veröffentlicht in: | Journal of applied physics 2011-07, Vol.110 (1), p.013702-013702-4 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The electrical properties of organic thin film transistors (OTFTs) based on pentacene as the active layer and lithium fluoride (LiF) as the gate dielectric layer were investigated. Fabricated devices exhibited ambipolar behavior that can be controlled by the applied source, drain and gate biases. It was found that at low source-drain biases, multistep hopping is the dominant conduction mechanism, whereas in high voltage regimes, I-V data fits in the Fowler-Nordheim (FN) tunneling model. The relationship between the applied gate bias and the field enhancement factor, which is the ratio of the local surface electric field to the applied electric field, were determined from the slope of the FN plots. The dependency between the transition points in conduction mechanism upon gate bias has also been extracted from the FN plots. The transition points show more dependency on gate voltage for negative biases compared to the positive biases. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.3597323 |