MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates

Using lattice matched ZnO substrates, wurtzite single crystalline Mg0.49Zn0.51O films were obtained by reactive magnetron cosputtering method, and the heterostructures of MgZnO/ZnO were fabricated into metal-semiconductor-metal solar-blind photodetectors (SBPDs). Calculated and experimental results...

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Veröffentlicht in:Applied physics letters 2011-05, Vol.98 (22)
Hauptverfasser: Zheng, Qinghong, Huang, Feng, Ding, Kai, Huang, Jin, Chen, Dagui, Zhan, Zhibing, Lin, Zhang
Format: Artikel
Sprache:eng
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Zusammenfassung:Using lattice matched ZnO substrates, wurtzite single crystalline Mg0.49Zn0.51O films were obtained by reactive magnetron cosputtering method, and the heterostructures of MgZnO/ZnO were fabricated into metal-semiconductor-metal solar-blind photodetectors (SBPDs). Calculated and experimental results demonstrate that the response of the ZnO substrate can be suppressed by adopting a thick MgZnO epilayer. The SBPD with a 2 μm thick MgZnO epilayer shows a peak responsivity of 304 mA/W at 260 nm under 10 V bias, which is comparable to the highest value ever reported in MgZnO-based SBPDs. A rejection ratio (R260 nm/R365 nm) over 5×102 is also observed, indicating fully suppression of the signal from ZnO substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3596479