Low activation energy, high-quality oxidation of Si and Ge using neutral beam

In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate tempe...

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Veröffentlicht in:Applied physics letters 2011-05, Vol.98 (20)
Hauptverfasser: Wada, Akira, Endo, Kazuhiko, Masahara, Meishoku, Huang, Chi-Hsien, Samukawa, Seiji
Format: Artikel
Sprache:eng
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Zusammenfassung:In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3592576