Large-signal and high-frequency analysis of nonuniformly doped or shaped pn-junction diodes

An analytical theory of nonuniformly doped or shaped pn-junction diodes subjected to large signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally varying cross section. Although axial symmetry is assumed, this approach gives rise to useful analytic expressions for the static current-voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of signal amplitude and cross-section nonuniformity.