Doping effects in zone-melting recrystallization of silicon thin films

Effects of dopant additions on interface stability in zone-melting recrystallization (ZMR) of silicon thin films have been investigated through computer simulation and experiments. The computer simulation has shown that a critical scanning speed V* exists such that the critical wavelength λ* of the...

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Veröffentlicht in:	Journal of applied physics 1995-06, Vol.77 (11), p.6000-6005
Hauptverfasser:	Lee, Si-Woo, Joo, Seung-Ki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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