Doping effects in zone-melting recrystallization of silicon thin films

Effects of dopant additions on interface stability in zone-melting recrystallization (ZMR) of silicon thin films have been investigated through computer simulation and experiments. The computer simulation has shown that a critical scanning speed V* exists such that the critical wavelength λ* of the solidifying interface increases with scanning speed below V* due to radiative supercooling, while λ* decreases with scanning speed above V* due to constitutional supercooling. Experiments determined that V* decreased with additions of B and P, which was expected from the results of the computer simulation. The primary defect spacings after ZMR was found to increase with the addition of dopants prior to ZMR.