Sputtered SiN x film for self-aligned Si-Zn diffusion into GaAs and AlGaAs

A new technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs is described. In this technology, closed-tube Si diffusion is obtained from a sputtered SiNx film, and Zn diffusion self-aligned to the Si diffusion window is obtained by reusing the SiNx film as the mask. The key to a successful...

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Veröffentlicht in:Journal of applied physics 1995-06, Vol.77 (12), p.6244-6246
Hauptverfasser: Zou, W. X., Boudreau, R., Han, H. T., Bowen, T., Shi, Song Stone, Mui, D. S. L., Merz, J. L.
Format: Artikel
Sprache:eng
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Zusammenfassung:A new technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs is described. In this technology, closed-tube Si diffusion is obtained from a sputtered SiNx film, and Zn diffusion self-aligned to the Si diffusion window is obtained by reusing the SiNx film as the mask. The key to a successful self-aligned Si-Zn diffusion is that the SiNx film is controlled to have a proper refractive index profile.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.359155