Sputtered SiN x film for self-aligned Si-Zn diffusion into GaAs and AlGaAs
A new technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs is described. In this technology, closed-tube Si diffusion is obtained from a sputtered SiNx film, and Zn diffusion self-aligned to the Si diffusion window is obtained by reusing the SiNx film as the mask. The key to a successful...
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Veröffentlicht in: | Journal of applied physics 1995-06, Vol.77 (12), p.6244-6246 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A new technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs is described. In this technology, closed-tube Si diffusion is obtained from a sputtered SiNx film, and Zn diffusion self-aligned to the Si diffusion window is obtained by reusing the SiNx film as the mask. The key to a successful self-aligned Si-Zn diffusion is that the SiNx film is controlled to have a proper refractive index profile. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.359155 |