Room temperature ferromagnetism in partially hydrogenated epitaxial graphene

We report room temperature ferromagnetism in partially hydrogenated epitaxial graphene grown on 4 H  SiC ( 0001 ) . The presence of ferromagnetism was confirmed by superconducting quantum interference devices measurements. Synchrotron-based near-edge x-ray absorption fine structure and high resolution electron energy loss spectroscopy measurements have been used to investigate the hydrogenation mechanism on the epitaxial graphene and the origin of room temperature ferromagnetism. The partial hydrogenation induces the formation of unpaired electrons in graphene, which together with the remnant delocalized π bonding network, can explain the observed ferromagnetism in partially hydrogenated epitaxial graphene.