Limiting loss mechanisms in 23% efficient silicon solar cells

The ‘‘passivated emitter and rear locally diffused’’ (PERL) silicon solar cell structure presently demonstrates the highest terrestrial performance of any silicon-based solar cell. This paper presents a detailed investigation of the limiting loss mechanisms in PERL cells exhibiting independently confirmed 1-sun efficiencies of up to 23.0%. Optical, resistive, and recombinative losses are all analyzed under the full range of solar cell operating conditions with the aid of two-dimensional (2D) device simulations. The analysis is based on measurements of the reflectance, quantum efficiency, dark and illuminated current–voltage (I–V) characteristics, and properties of the Si–SiO2 interfaces employed on these cells for surface passivation. Through the use of the 2D simulations, particular attention has been paid to the magnitudes of the spatially resolved recombination losses in these cells. It is shown that approximately 50% of the recombination losses at the 1-sun maximum power point occur in the base of the cells, followed by recombination losses at the rear and front oxidized surfaces (25% and