Carrier transport properties of iodine-doped (ZnS)3(ZnSe)42 ordered alloys grown by atomic layer epitaxy

Iodine-doped ordered alloys, given in a form of (ZnS)3(ZnSe)42, were grown on a GaAs(100) substrate by hydrogen radical-enhanced chemical vapor deposition using atomic layer epitaxy. Iso-buthyliodide was used for the first time as the doping source. A very high Hall mobility of 470 cm2/V s was obtai...

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Veröffentlicht in:Journal of applied physics 1995-04, Vol.77 (8), p.3927-3933
Hauptverfasser: Fujiwara, Hiroyuki, Kiryu, Hideaki, Shimizu, Isamu
Format: Artikel
Sprache:eng
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Zusammenfassung:Iodine-doped ordered alloys, given in a form of (ZnS)3(ZnSe)42, were grown on a GaAs(100) substrate by hydrogen radical-enhanced chemical vapor deposition using atomic layer epitaxy. Iso-buthyliodide was used for the first time as the doping source. A very high Hall mobility of 470 cm2/V s was obtained at room temperature in the slightly I-doped sample (3×1016 cm−3). This high mobility is due to the elimination of structural fluctuations by forming a two-dimensional ordered structure, which was confirmed by the satellite peaks in x-ray diffraction spectra. Blue band-edge emissions were found to be dominant at 35 K and room temperature in photoluminescence spectra. These results indicate that the formation of defects was minimized in these crystals by the layer-by-layer structure and the low-temperature growth at 200 °C.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.358572