Carrier transport properties of iodine-doped (ZnS)3(ZnSe)42 ordered alloys grown by atomic layer epitaxy
Iodine-doped ordered alloys, given in a form of (ZnS)3(ZnSe)42, were grown on a GaAs(100) substrate by hydrogen radical-enhanced chemical vapor deposition using atomic layer epitaxy. Iso-buthyliodide was used for the first time as the doping source. A very high Hall mobility of 470 cm2/V s was obtai...
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Veröffentlicht in: | Journal of applied physics 1995-04, Vol.77 (8), p.3927-3933 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Iodine-doped ordered alloys, given in a form of (ZnS)3(ZnSe)42, were grown on a GaAs(100) substrate by hydrogen radical-enhanced chemical vapor deposition using atomic layer epitaxy. Iso-buthyliodide was used for the first time as the doping source. A very high Hall mobility of 470 cm2/V s was obtained at room temperature in the slightly I-doped sample (3×1016 cm−3). This high mobility is due to the elimination of structural fluctuations by forming a two-dimensional ordered structure, which was confirmed by the satellite peaks in x-ray diffraction spectra. Blue band-edge emissions were found to be dominant at 35 K and room temperature in photoluminescence spectra. These results indicate that the formation of defects was minimized in these crystals by the layer-by-layer structure and the low-temperature growth at 200 °C. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.358572 |