Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

The mechanisms of the temperature-dependent forward gate current transport in the atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. In contrast to the conventional Schottky-gate AlGaN/GaN HEMT, thermionic field emission was found not to be the dominant transport mechanism for the Al2O3/AlGaN/GaN MISHEMT. Fowler–Nordheim tunneling was found to be dominant at low temperature (T0 °C).