All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory

We introduce an all-inorganic solution processed bipolar nonvolatile resistive memory device with quantum dot/metal-metal oxide/quantum dot structure. The two terminal device exhibits excellent switching characteristics with ON/OFF ratio >10 3 . The device maintained its state even after removal of the bias voltage. The switching time is faster than 50 ns. Device did not show degradation after 1-h retention test at 150 °C. The memory functionality was consistent even after multiple cycles of operation and the device is reproducible. The switching mechanism is discussed on the basis of charge trapping in quantum dots with metal oxide serving as the barrier.