Identification of tunneling emission in Si-SiO2 interfaces by multipoint correlation method with binomial weighting coefficients
An analysis of the constant capacitance deep level transient spectroscopy method which shows the effect of tunneling emission processes from oxide traps is presented. It is based upon the correlation signal for a multipoint correlation method with binomial weighting coefficients, and includes the ef...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 1994-07, Vol.76 (1), p.352-358 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | An analysis of the constant capacitance deep level transient spectroscopy method which shows the effect of tunneling emission processes from oxide traps is presented. It is based upon the correlation signal for a multipoint correlation method with binomial weighting coefficients, and includes the effect of a spatial distribution of oxide traps. |
|---|---|
| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.357080 |