Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Ni Schottky contacts on AlGaN/GaN heterostructures have been fabricated, and one of the prepared samples has been annealed at 700 °C for half an hour. The barrier heights for the prepared samples were measured by internal photoemission. Based on the measured forward current-voltage (I-V) characteristics and using the two-diode model, the Ni Schottky barrier height at zero bias has been analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations, and the correlation expression between the barrier height at zero electric field and that at zero bias has been derived for Schottky contacts on AlGaN/GaN heterostructures. The calculated Schottky barrier heights corresponding to zero electric field for the prepared Ni Schottky contacts on AlGaN/GaN heterostructures agree well with the photocurrent measured results. Thus, the method for extraction of AlGaN/GaN heterostructure Schottky barrier heights from forward I-V characteristics is developed and determined.