Low-temperature synthesis of large-area graphene-based transparent conductive films using surface wave plasma chemical vapor deposition

We present a low-temperature ( 300 - 400 ° C ) , large-area ( 23   cm × 20   cm ) and efficient synthesis method for graphene-based transparent conductive films using surface wave plasma chemical vapor deposition. The films consist of few-layer graphene sheets. Their transparency and conductivity ch...

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Veröffentlicht in:Applied physics letters 2011-02, Vol.98 (9), p.091502-091502-3
Hauptverfasser: Kim, Jaeho, Ishihara, Masatou, Koga, Yoshinori, Tsugawa, Kazuo, Hasegawa, Masataka, Iijima, Sumio
Format: Artikel
Sprache:eng
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Zusammenfassung:We present a low-temperature ( 300 - 400 ° C ) , large-area ( 23   cm × 20   cm ) and efficient synthesis method for graphene-based transparent conductive films using surface wave plasma chemical vapor deposition. The films consist of few-layer graphene sheets. Their transparency and conductivity characteristics make them suitable for practical electrical and optoelectronic applications, which have been demonstrated by the proper operation of a touch panel fabricated using the films. The results confirm that our method could be suitable for the industrial mass production of macroscopic-scale graphene-based films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3561747