Thin-film transistors based on poly(3, 3 ‴ -dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability

The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly(3, 3 ‴ -dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2 × 10 − 4 cm 2 / V s . After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3 × 10 − 5 cm 2 / V s . Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required.