Growth rate dependent trap density in polythiophene-fullerene solar cells and its implications

To understand the effect of processing conditions such as spin coating speed and drying rate on the density of defects; poly(3-hexylthiophene):fullerene-derivative solar cells A, B, and C were fabricated with solvent drying times of ∼ 40   min , 7 min, and 1 min, respectively. We show that slowest g...

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Veröffentlicht in:Applied physics letters 2011-02, Vol.98 (9), p.093306-093306-3
Hauptverfasser: Nalwa, Kanwar S., Mahadevapuram, Rakesh C., Chaudhary, Sumit
Format: Artikel
Sprache:eng
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Zusammenfassung:To understand the effect of processing conditions such as spin coating speed and drying rate on the density of defects; poly(3-hexylthiophene):fullerene-derivative solar cells A, B, and C were fabricated with solvent drying times of ∼ 40   min , 7 min, and 1 min, respectively. We show that slowest grown device A has one order of magnitude less subband gap traps than device C. The open circuit voltage and its light intensity dependence was strongly affected by interfacial recombination of carriers at subgap defect states. The losses due to trap-assisted recombination can even dominate over bimolecular recombination, depending on the density of defect states
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3560483