Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation

The pronounced high interfacial densities of states (Dit) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transi...

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Veröffentlicht in:Applied physics letters 2011-02, Vol.98 (6)
Hauptverfasser: Lin, C. A., Chiu, H. C., Chiang, T. H., Lin, T. D., Chang, Y. H., Chang, W. H., Chang, Y. C., Wang, W.-E., Dekoster, J., Hoffmann, T. Y., Hong, M., Kwo, J.
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Sprache:eng
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Zusammenfassung:The pronounced high interfacial densities of states (Dit) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transistors. In this work, comprehensive Dit spectra as the function of energy [Dit(E)] inside the In0.2Ga0.8As band gap were constructed by using the quasistatic capacitance-voltage and the temperature-dependent conductance method on n- and p-type ultrahigh vacuum (UHV)-Ga2O3(Gd2O3)/In0.2Ga0.8As and atomic-layer-deposited (ALD)-Al2O3/In0.2Ga0.8As metal-oxide-semiconductor capacitors. Unlike the ALD-Al2O3/In0.2Ga0.8As interface giving a Dit spectrum with a high midgap Dit peak, the UHV-Ga2O3(Gd2O3)/In0.2Ga0.8As interface shows a Dit spectrum that monotonically decreases from the valence band to the conduction band with no discernible midgap peak.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3554375