Binding energies and density of impurity states in spherical GaAs-(Ga,Al)As quantum dots

The binding energies of hydrogenic donor in both finite and infinite GaAs-(Ga,Al)As spherical quantum dots are calculated as a function of the donor position for different radii within the effective-mass approximation. It is observed an enhancement of the binding energy of donors in quantum dots whe...

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Veröffentlicht in:	Journal of applied physics 1993-12, Vol.74 (12), p.7624-7626
Hauptverfasser:	PORRAS-MONTENEGRO, N, PEREZ-MERCHANCANO, S. T, LATGE, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Impurity and defect levels energy states of adsorbed species Lattice dynamics Phonon-electron and phonon-phonon interactions Phonons and vibrations in crystal lattices Physics Surface and interface electron states
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