Binding energies and density of impurity states in spherical GaAs-(Ga,Al)As quantum dots

The binding energies of hydrogenic donor in both finite and infinite GaAs-(Ga,Al)As spherical quantum dots are calculated as a function of the donor position for different radii within the effective-mass approximation. It is observed an enhancement of the binding energy of donors in quantum dots whe...

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Veröffentlicht in:Journal of applied physics 1993-12, Vol.74 (12), p.7624-7626
Hauptverfasser: PORRAS-MONTENEGRO, N, PEREZ-MERCHANCANO, S. T, LATGE, A
Format: Artikel
Sprache:eng
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Zusammenfassung:The binding energies of hydrogenic donor in both finite and infinite GaAs-(Ga,Al)As spherical quantum dots are calculated as a function of the donor position for different radii within the effective-mass approximation. It is observed an enhancement of the binding energy of donors in quantum dots when compared to results in quantum wells and quantum-well wires, which is an expected consequence of the higher geometrical electronic confinement in these systems. The density of impurity states as a function of the donor binding energy was also calculated. As a general feature it presents structures associated with special impurity positions that may be important in the understanding of the absorption and photoluminescence experiments of doped quantum dots.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354943