Hydrogen effects on oxygen precipitation in Czochralski silicon crystals
We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution...
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| Veröffentlicht in: | Journal of applied physics 1993-07, Vol.74 (2), p.913-916 |
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| container_title | Journal of applied physics |
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| creator | HARA, A AOKI, M FUKUDA, T OHSAWA, A |
| description | We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270 °C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen-related aggregates are found to be related to enhanced oxygen precipitation. |
| doi_str_mv | 10.1063/1.354858 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_354858</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3752531</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-3865c8305e3ac8fb2848256b564d41f838e6e8ce266afb13b50cb4c9df2e5c153</originalsourceid><addsrcrecordid>eNo9kMFKxDAURYMoOI6Cn9CFCzcdk7y-zOtSis4IA250XdI3iUZrW5IurF9vhxFXBw6Hu7hCXCu5UtLAnVoBFoR0IhZKUpmvEeWpWEipVU7lujwXFyl9SKkUQbkQ2-20j_2b6zLnveMxZX2X9d_TwQzRcRjCaMcwy9Bl1U_P79G26TNkKbSBZ81xSuOsLsWZn-Gu_rgUr48PL9U23z1vnqr7Xc6g5ZgDGWQCiQ4sk280FaTRNGiKfaE8ATnjiJ02xvpGQYOSm4LLvdcOWSEsxe1xl2OfUnS-HmL4snGqlawPD9SqPj4wpzfHdLCJbeuj7Tik_x7WqBEU_ALKZVrr</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Hydrogen effects on oxygen precipitation in Czochralski silicon crystals</title><source>AIP Digital Archive</source><creator>HARA, A ; AOKI, M ; FUKUDA, T ; OHSAWA, A</creator><creatorcontrib>HARA, A ; AOKI, M ; FUKUDA, T ; OHSAWA, A</creatorcontrib><description>We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270 °C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen-related aggregates are found to be related to enhanced oxygen precipitation.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.354858</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Materials science ; Physics ; Solid solution hardening, precipitation hardening, and dispersion hardening; aging ; Solid solution, precipitation, and dispersion hardening; aging ; Solubility, segregation, and mixing; phase separation ; Treatment of materials and its effects on microstructure and properties</subject><ispartof>Journal of applied physics, 1993-07, Vol.74 (2), p.913-916</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-3865c8305e3ac8fb2848256b564d41f838e6e8ce266afb13b50cb4c9df2e5c153</citedby><cites>FETCH-LOGICAL-c320t-3865c8305e3ac8fb2848256b564d41f838e6e8ce266afb13b50cb4c9df2e5c153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3752531$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HARA, A</creatorcontrib><creatorcontrib>AOKI, M</creatorcontrib><creatorcontrib>FUKUDA, T</creatorcontrib><creatorcontrib>OHSAWA, A</creatorcontrib><title>Hydrogen effects on oxygen precipitation in Czochralski silicon crystals</title><title>Journal of applied physics</title><description>We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270 °C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen-related aggregates are found to be related to enhanced oxygen precipitation.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Physics</subject><subject>Solid solution hardening, precipitation hardening, and dispersion hardening; aging</subject><subject>Solid solution, precipitation, and dispersion hardening; aging</subject><subject>Solubility, segregation, and mixing; phase separation</subject><subject>Treatment of materials and its effects on microstructure and properties</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kMFKxDAURYMoOI6Cn9CFCzcdk7y-zOtSis4IA250XdI3iUZrW5IurF9vhxFXBw6Hu7hCXCu5UtLAnVoBFoR0IhZKUpmvEeWpWEipVU7lujwXFyl9SKkUQbkQ2-20j_2b6zLnveMxZX2X9d_TwQzRcRjCaMcwy9Bl1U_P79G26TNkKbSBZ81xSuOsLsWZn-Gu_rgUr48PL9U23z1vnqr7Xc6g5ZgDGWQCiQ4sk280FaTRNGiKfaE8ATnjiJ02xvpGQYOSm4LLvdcOWSEsxe1xl2OfUnS-HmL4snGqlawPD9SqPj4wpzfHdLCJbeuj7Tik_x7WqBEU_ALKZVrr</recordid><startdate>19930715</startdate><enddate>19930715</enddate><creator>HARA, A</creator><creator>AOKI, M</creator><creator>FUKUDA, T</creator><creator>OHSAWA, A</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930715</creationdate><title>Hydrogen effects on oxygen precipitation in Czochralski silicon crystals</title><author>HARA, A ; AOKI, M ; FUKUDA, T ; OHSAWA, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-3865c8305e3ac8fb2848256b564d41f838e6e8ce266afb13b50cb4c9df2e5c153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Physics</topic><topic>Solid solution hardening, precipitation hardening, and dispersion hardening; aging</topic><topic>Solid solution, precipitation, and dispersion hardening; aging</topic><topic>Solubility, segregation, and mixing; phase separation</topic><topic>Treatment of materials and its effects on microstructure and properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HARA, A</creatorcontrib><creatorcontrib>AOKI, M</creatorcontrib><creatorcontrib>FUKUDA, T</creatorcontrib><creatorcontrib>OHSAWA, A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HARA, A</au><au>AOKI, M</au><au>FUKUDA, T</au><au>OHSAWA, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hydrogen effects on oxygen precipitation in Czochralski silicon crystals</atitle><jtitle>Journal of applied physics</jtitle><date>1993-07-15</date><risdate>1993</risdate><volume>74</volume><issue>2</issue><spage>913</spage><epage>916</epage><pages>913-916</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270 °C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen-related aggregates are found to be related to enhanced oxygen precipitation.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.354858</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1993-07, Vol.74 (2), p.913-916 |
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| language | eng |
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| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Materials science Physics Solid solution hardening, precipitation hardening, and dispersion hardening aging Solid solution, precipitation, and dispersion hardening aging Solubility, segregation, and mixing phase separation Treatment of materials and its effects on microstructure and properties |
| title | Hydrogen effects on oxygen precipitation in Czochralski silicon crystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T00%3A06%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hydrogen%20effects%20on%20oxygen%20precipitation%20in%20Czochralski%20silicon%20crystals&rft.jtitle=Journal%20of%20applied%20physics&rft.au=HARA,%20A&rft.date=1993-07-15&rft.volume=74&rft.issue=2&rft.spage=913&rft.epage=916&rft.pages=913-916&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.354858&rft_dat=%3Cpascalfrancis_cross%3E3752531%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |