Hydrogen effects on oxygen precipitation in Czochralski silicon crystals

We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution...

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Veröffentlicht in:	Journal of applied physics 1993-07, Vol.74 (2), p.913-916
Hauptverfasser:	HARA, A, AOKI, M, FUKUDA, T, OHSAWA, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Materials science Physics Solid solution hardening, precipitation hardening, and dispersion hardening aging Solid solution, precipitation, and dispersion hardening aging Solubility, segregation, and mixing phase separation Treatment of materials and its effects on microstructure and properties
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Zusammenfassung:	We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys. 66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270 °C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen-related aggregates are found to be related to enhanced oxygen precipitation.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.354858