Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure

We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional elec...

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Veröffentlicht in:	Journal of applied physics 1993-08, Vol.74 (3), p.2100-2102
Hauptverfasser:	SCHMIEDEL, T, FU, L. P, LEE, S. T, YU, W. Y, PETROU, A, DUTTA, M, PAMULAPATI, J, NEWMAN, P. G, BOVIATSIS, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Iii-v and ii-vi semiconductors Iii-v semiconductors Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics
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Zusammenfassung:	We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional electron gas. The Raman spectra contain a feature associated with the e1→e2 intersubband transition.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.354730