Plasma edge and its application to infrared measurement and detection

A steep plasma edge in infrared reflectivity spectra of Hg1−xCdxTe and HgSe:Fe has been observed. It is predicted that the edge is sensitive to the variation of carrier concentration, which indicates the possibility of developing a fast light-controlled switch for infrared radiation as well as a new...

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Veröffentlicht in:	Journal of applied physics 1993-09, Vol.74 (5), p.3061-3064
1. Verfasser:	Qian, Dingrong
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology High-frequency effects plasma effects Iii-v and ii-vi semiconductors Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics
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Beschreibung
Zusammenfassung:	A steep plasma edge in infrared reflectivity spectra of Hg1−xCdxTe and HgSe:Fe has been observed. It is predicted that the edge is sensitive to the variation of carrier concentration, which indicates the possibility of developing a fast light-controlled switch for infrared radiation as well as a new approach of infrared modulation and detection. The modulation gain in power and detectivity limited by the generation-recombination process has been calculated and compared with the photoconductive counterpart.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.354622