Wannier-Stark localization in InGaAs/GaAs superlattices and its application to electro-optical devices

We have observed Wannier–Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 1993-09, Vol.74 (6), p.4274-4276
Hauptverfasser: Liu, Wei, Zhang, Yaohui, Jiang, Desheng, Wang, Ruozhen, Zhou, Junming, Mei, Xiaobing
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have observed Wannier–Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of the superlattices at room temperature suggests the possibilities of the application to the design of various kinds of electro-optical devices operating at a wavelength of 0.98 μm, based on Wannier–Stark localization effects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354390