Wannier-Stark localization in InGaAs/GaAs superlattices and its application to electro-optical devices
We have observed Wannier–Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of...
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Veröffentlicht in: | Journal of applied physics 1993-09, Vol.74 (6), p.4274-4276 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have observed Wannier–Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of the superlattices at room temperature suggests the possibilities of the application to the design of various kinds of electro-optical devices operating at a wavelength of 0.98 μm, based on Wannier–Stark localization effects. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.354390 |