Methyl- and dimethyl-associated paramagnetic centers in SiO2 thin films

SiO2 thin films, deposited by the plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate (TEOS) and O2 as precursors, exhibit electron-paramagnetic-resonance signals that are interpreted in terms of methyl- and dimethyl-associated centers. The former are observed in as-dep...

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Veröffentlicht in:Journal of applied physics 1993-11, Vol.74 (9), p.5527-5530
Hauptverfasser: HOINKIS, M, CROWDER, M. S, NGUYEN, B. C, GALIANO, M. L
Format: Artikel
Sprache:eng
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Zusammenfassung:SiO2 thin films, deposited by the plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate (TEOS) and O2 as precursors, exhibit electron-paramagnetic-resonance signals that are interpreted in terms of methyl- and dimethyl-associated centers. The former are observed in as-deposited films and in films thermally treated below 500 °C while the latter are observed in films that have been thermally treated between 700 and 950 °C. These hydrocarbon-containing paramagnetic centers originate from TEOS’s ethyl constituents that are incorporated in the SiO2 film during growth.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354210