Methyl- and dimethyl-associated paramagnetic centers in SiO2 thin films
SiO2 thin films, deposited by the plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate (TEOS) and O2 as precursors, exhibit electron-paramagnetic-resonance signals that are interpreted in terms of methyl- and dimethyl-associated centers. The former are observed in as-dep...
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Veröffentlicht in: | Journal of applied physics 1993-11, Vol.74 (9), p.5527-5530 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | SiO2 thin films, deposited by the plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate (TEOS) and O2 as precursors, exhibit electron-paramagnetic-resonance signals that are interpreted in terms of methyl- and dimethyl-associated centers. The former are observed in as-deposited films and in films thermally treated below 500 °C while the latter are observed in films that have been thermally treated between 700 and 950 °C. These hydrocarbon-containing paramagnetic centers originate from TEOS’s ethyl constituents that are incorporated in the SiO2 film during growth. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.354210 |