Temperature dependence of the Schottky barrier in Al/AlGaAs metal-semiconductor junctions

The dependence on temperature and alloy composition of the Schottky barrier height of Al on AlxGa1−xAs metal-semiconductor junctions for n- and p-type substrates and 0

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1993-07, Vol.74 (1), p.416-425
Hauptverfasser:	REVVA, P, LANGER, J. M, MISSOUS, M, PEAKER, A. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The dependence on temperature and alloy composition of the Schottky barrier height of Al on AlxGa1−xAs metal-semiconductor junctions for n- and p-type substrates and 0
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.354126