Infrared reflectivity study of ion-implanted GaAs

Ion-implanted GaAs is investigated by means of a fast nondestructive optical technique. We analyzed the implanted substrates by performing a simple bilinear transformation of the experimental infrared reflectance followed by a Fourier spectral analysis. Three cases are analyzed in this paper: (i) Cr...

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Veröffentlicht in:	Journal of applied physics 1993-05, Vol.73 (10), p.5173-5176
Hauptverfasser:	AIZENBERG, G. E, SWART, P. L, LACQUET, B. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Iii-v and ii-vi semiconductors Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Ion-implanted GaAs is investigated by means of a fast nondestructive optical technique. We analyzed the implanted substrates by performing a simple bilinear transformation of the experimental infrared reflectance followed by a Fourier spectral analysis. Three cases are analyzed in this paper: (i) Cr-doped, semi-insulating
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.353793